FQPF2N60 N-Channel 600V - 4.7 Ohm - 2A Power MOSFET Transistor.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

7N80 N-Channel 800V - 1.9 Ohm - 6.6A Power MOSFET Transistor.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

The IRFZ44N Power MOSFET N-Channel Enhancement Mode. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

FQPF 4N60 600V 2.6A Power MOSFET Transistor.
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

IRF540 N-Channel 33Amps 100V Power MOSFET Transistor

FQPF 6N60 600V 5.5A Power MOSFET Transistor.

IRF 740 N-Channel 10Amps 400V Power MOSFET Transistor

IRF840 N-Channel 8Amps 500V Power MOSFET Transistor

STP30NF10 N-channel 100V - 0.038 Ohm - 35A Power MOSFET in TO-220 package.
This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

IRF3710 MOSFET - 100V 57A N-Channel HEXFET Power MOSFET in TO-220 Package.
Drain-Source Volt (Vds): 100V, Gate-Source Volt (Vgs): 20V, Drain Current (Id): 57A, Power Dissipation (Ptot): 200W, Type: N-Channel.

STP55NF06 N-channel 60V, 50A Power MOSFET in TO-220 package.
These Power MOSFETs have been developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

STP75NF75 N-channel 75V - 0.0095 Ohm - 80A Power MOSFET Transistor.
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

P80NF55 N-channel Power MOSFET Transistor.
Brand: STMicroelectronics

The IRFZ44N Power MOSFET N-Channel Enhancement Mode. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

FQPF9N90C N-Channel 900V - 1.4 Ohm - 8A Power MOSFET Transistor.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.